IDH10G120C5 - Silicon Carbide Schottky Diode

Product Overview

Infineon

Datasheet Details

Part number	IDH10G120C5
Manufacturer	Infineon
File Size	891.97 KB
Description	Silicon Carbide Schottky Diode
Datasheet	IDH10G120C5 Datasheet
Additional preview pages of the IDH10G120C5 datasheet.

Product details

Description

2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 6 Package Drawings 9 Revision History 10 Disclaimer 11 Final Data Sheet 3 Rev.2.1, 2017-07-21 IDH10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Maximum ratings Parameter Repetitive peak reverse voltage Continues forward current for Rth(j-c,max) TC = 155°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10m

Features

Revolutionary semiconductor material - Silicon Carbide.
No reverse recovery current / No forward recovery.
Temperature independent switching behavior.
Low forward voltage even at high operating temperature.
Tight forward voltage distribution.
Excellent thermal performance.
Extended surge current capability.
Specified dv/dt ruggedness.
Qualified according to JEDEC1) for target.

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Published: Feb 25, 2016 |