Datasheet4U Logo Datasheet4U.com

IDH10G120C5 - Silicon Carbide Schottky Diode

Description

3 Rev.

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / No forward recovery.
  • Temperature independent switching behavior.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Datasheet preview – IDH10G120C5

Datasheet Details

Part number IDH10G120C5
Manufacturer Infineon
File Size 891.97 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet IDH10G120C5 Datasheet
Additional preview pages of the IDH10G120C5 datasheet.

📁 Similar Datasheet

  • IDH10S120 - Schottky Diode (Infineon Technologies)
  • IDH10S60C - Schottky Diode (Infineon Technologies)
  • IDH10SG60C - Schottky Diode (Infineon Technologies)
  • IDH12S60C - Schottky Diode (Infineon Technologies)
  • IDH12SG60C - Schottky Diode (Infineon Technologies)
  • IDH15S120 - Schottky Diode (Infineon Technologies)
  • IDH16S60C - Schottky Diode (Infineon Technologies)
  • IDH-20PK1-Sx - 4 Sided .025 sq. Post Headers (RN)
  • IDH-50LP-xx - Low Profile Headers (RN)
  • IDH02SG120 - Schottky Diode (Infineon Technologies)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
Diode Silicon Carbide Schottky Diode IDH10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.
Published: |