Infineon Technologies IDT02S60C
Schottky Diode
| Part No. | IDT02S60C |
|---|---|
| Datasheet | IDT02S60C Download |
| Manufacturer |  Infineon Technologies |
| Description | Schottky Diode |
| Buy | Stock & Price |
FEATURES
● Revolutionary semiconductor material - Silicon Carbide● No reverse recovery/ no forward recovery
● Temperature independent switching behavior
● High surge current capability
● Qualified according to JEDEC1) for target applications
● Breakdown voltage tested at 5mA2)
● Optimized for high temperature operation Product Summary V DC Qc IF 600 3.2 2 V nC A PG-TO220-2-2 thinQ! 2G Diode specially designed for fast switching applications like:
● CCM PFC Type IDT02S60C Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<120 °C T C<70 °C RMS forward current I F,RMS f =50 Hz T C=25 °C, t p=10 ms T C=150°C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150°C, t p=10 ms Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 V RRM dv/ dt P tot T j, T stg M3 and M3.5 screws page 1 T j=25 °C V R = 0….480V T C=25 °C Value 2 3 2.8 11.5 9.7 7.3 100 0.61 0.44 600 50 18 -55 ...
