Infineon Technologies IDT03S60C
Schottky Diode
| Part No. | IDT03S60C |
|---|---|
| Datasheet | IDT03S60C Download |
| Manufacturer |  Infineon Technologies |
| Description | Schottky Diode |
| Buy | Stock & Price |
FEATURES
● Revolutionary semiconductor material - Silicon Carbide● No reverse recovery/ no forward recovery
● Temperature independent switching behavior
● High surge current capability
● Qualified according to JEDEC1) for target applications
● Breakdown voltage tested at 5mA2)
● Optimized for high temperature operation Product Summary V DC Qc IF 600 5 3 V nC A PG-TO220-2-2 thinQ! 2G Diode designed for fast switching applications like:
● CCM PFC Type IDT03S60C Maximum ratings, Parameter Continuous forward current Symbol Conditions IF T C<120 °C T C<70 °C RMS forward current I F,RMS f =50 Hz T C=25 °C, t p=10 ms T C=150°C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150°C, t p=10 ms Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque V RRM dv/ dt P tot T j, T stg M3 and M3.5 screws T j=25 °C V R = 0….480V T C=25 °C Value 3 4.5 4.2 16 14 10.5 115 1.2 0.96 600 50 25 -55 ... 17...
