Infineon Technologies IDT04S60C
2nd Generation thinQ SiC Schottky Diode
| Part No. | IDT04S60C |
|---|---|
| Datasheet | IDT04S60C Download |
| Manufacturer |  Infineon Technologies |
| Description | 2nd Generation thinQ SiC Schottky Diode |
| Buy | Stock & Price |
FEATURES
● Revolutionary semiconductor material - Silicon Carbide● Switching behavior benchmark
● No reverse recovery/ No forward recovery
● No temperature influence on the switching behavior
● High surge current capability
● Pb-free lead plating; RoHS compliant
● Qualified according to JEDEC1) for target applications
● Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 8 4 V nC A PG-TO220-2-2 thinQ! 2G Diode specially designed for fast switching applications like:
● CCM PFC
● Motor Drives Type IDT04S60C Package PG-TO220-2-2 Marking D04S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 4 5.6 32 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Rev.
