Datasheet Summary
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
Final Datasheet
Rev. 2.0, 2015-04-13
Power Management & Multimarket
5th Generation thinQ!™ SiC Schottky Diode
1 Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A bination with a new, more pact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to plement our 650V CoolMOS™ families: this ensures meeting the most stringent...
