IDW40G65C5B Datasheet | Infineon

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode Final Datasheet Rev. 2.0, 2015-04-13 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A bination with a new, more pact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to plement our 650V CoolMOS™ families: this ensures meeting the...