IDWD80G200C5
Features
- VRRM = 2000 V
- IF = 80 A
- VF = 1.5 V
- No reverse recovery current / no forward recovery
- High surge current capability
- Temperature independent switching behavior
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Specified dv/dt ruggedness
- .XT interconnection technology for best-in-class thermal performance Potential applications
- String 3-phase inverter
- EV Charging Product validation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
Pin definition: Pin 1
- Cathode Pin 2
- Anode
Si C Diode Gen5
2021-10-27 restricted
1 CASE
Type IDWD80G200C5
Package PG-TO247-2-U01
Marking D8020C5
Copyright © Infineon Techno
Datasheet .infineon.
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.00 2024-09-30
Cool Si C™ Schottky diode 2000 V G5
Table of contents
Table of contents
Description
- - . ....
