Part IFF300B12N2E4P_B11
Description IGBT
Manufacturer Infineon
Size 599.06 KB
Infineon
IFF300B12N2E4P_B11

Overview

  • Lowswitchinglosses
  • LowVCEsat
  • Tvjop=150°C MechanicalFeatures
  • Highpowerandthermalcyclingcapability
  • Isolatedbaseplate
  • Copperbaseplate
  • Standardhousing
  • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.0 2017-01-24 IFF300B12N2E4P_B11 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TH = 30°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VCES  IC nom  ICRM  VGES