IFF450B12ME4P_B11
Overview
- Integratedcurrentsensor
- LowVCEsat
- Tvjop=150°C
- VCEsatwithpositivetemperaturecoefficient MechanicalFeatures
- Highpowerdensity
- Isolatedbaseplate
- PressFITcontacttechnology
- Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.2 2019-06-21 IFF450B12ME4P_B11 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TH = 65°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VCES ICDC ICRM VGES
