Part IFF600B12ME4_B11
Description IGBT
Manufacturer Infineon
Size 622.01 KB
Infineon
IFF600B12ME4_B11

Overview

  • Integratedcurrentsensor
  • LowVCEsat
  • Tvjop=150°C
  • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures
  • Highpowerdensity
  • Isolatedbaseplate
  • PressFITcontacttechnology ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.0 2018-08-22 IFF600B12ME4_B11 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VCES  ICDC  ICRM  VGES