IFS75B12N3E4_B31 - IGBT-Module

Infineon

Datasheet Details

Part number	IFS75B12N3E4_B31
Manufacturer	Infineon
File Size	556.65 KB
Description	IGBT-Module
Datasheet	IFS75B12N3E4_B31 Datasheet
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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ™baseModulmitTrench/FeldstoppIGBT4,EmitterControlled4DiodeundStrommesswiderstand MIPAQ™basemodulewithtrench/fieldstopIGBT4,emittercontrolled4diodeandcurrentsenseshunt IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 95°C, Tvj = 175°C IC nom 75 PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 150 Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj = 175°C Ptot 385 Gate-Emitter-Spitzenspannung G

Published: Sep 28, 2019 |