Part IFX007T
Description High Current PN Half Bridge
Manufacturer Infineon
Size 1.35 MB
Infineon
IFX007T

Overview

  • Path resistance of max. 12.8 mΩ @ 25°C (typ. 10.0 mΩ @ 25°C) High side: max. 6.5 mΩ @ 25°C (typ. 5.3 mΩ @ 25°C) Low side: max. 6.3 mΩ @ 25°C (typ. 4.7 mΩ @ 25°C)
  • Enhanced switching speed for reduced switching losses
  • Capable for high PWM frequency combined with active freewheeling
  • Switched mode current limitation for reduced power dissipation in overcurrent
  • Current limitation level of 55 A min.
  • Status flag diagnosis with current sense capability
  • Overtemperature shutdown with latch behavior
  • Undervoltage shutdown
  • Driver circuit with logic level inputs
  • Adjustable slew rates for optimized EMI