IGC28T65T8M Datasheet | Infineon

IGBT3 Chip Medium Power Features : - 650V Trench & Field Stop technology - high short circuit capability, self limiting short circuit current - positive temperature coefficient - easy paralleling - Qualified according to JEDEC for target applications Remended for: - power modules Applications: - drives Chip Type IGC28T65T8M VCE 650V ICn 50A Die Size 6.57 x 4.2 mm2 Package sawn on foil Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal 6.57 x 4.2 See chip drawing 0.817 x 1.52 27.6 80 200 974 Photoimide 3200 nm AlSiCu Ni Ag -...