IGC39T65QE - High Speed IGBT3

Product Overview

Infineon

Datasheet Details

Part number	IGC39T65QE
Manufacturer	Infineon
File Size	94.92 KB
Description	High Speed IGBT3
Datasheet	IGC39T65QE Datasheet
Additional preview pages of the IGC39T65QE datasheet.

IGC39T65QE Product details

Description

Recommended for discrete components and modules Type IGC39T65QE Die size 6.59 mm x 5.91 mm Delivery form Sawn on foil Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-28 IGC39T65QE High Speed IGBT

Features

VCES = 650 V.
ICn = 75 A.
650 V trench & field stop technology.
High switching speed.
Low VCEsat.
Low EMI.
Low turn-off losses.
Positive temperature coefficient Potential.

📁 Similar Datasheet

Other Datasheets by Infineon

IGC39T65T8M - IGBT
IGC31T65QE - IGBT
IGC36T120T6L - IGBT
IGC36T120T8L - IGBT
IGC019S06S1 - 60V Transistor
IGC025S08S1 - Transistor
IGC033S101 - 100V Transistor
IGC033S10S1 - 100V Transistor

Published: Jun 10, 2020 |