IGC54T65T8RM Description
Remended for power modules Type IGC54T65T8RM Die size 5.97 mm x 8.97 mm Delivery form Sawn on foil Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-28 IGC54T65T8RM IGBT3 Chip Medium Power Table of contents Table of contents Description.
IGC54T65T8RM Key Features
- VCES = 650 V
- ICn = 100 A
- 650 V trench & field stop technology
- High short circuit capability, self limiting short circuit current
- Positive temperature coefficient
- Easy paralleling Potential