IGC80T75E12RD2CKA - EDT2 IGBT

Description

Recommended for power modules Product Validation

Technology qualified for automotive applications.

Ready for validation for automotive applications according to AEC Q100/101 or AQG324.

Features

750V trench + field stop technology.
Low VCE(sat).
Low switching losses.
Short tail current.
Positive temperature coefficient.
Integrated gate resistor.
Easy paralleling.
Integrated current mirror (current sensor).
Integrated temperature sensor.
Solderable / sinterable front side pads C G TSA TSC CS E.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IGC80T75E12RD2CKA
Manufacturer	Infineon
File Size	300.41 KB
Description	EDT2 IGBT
Datasheet	IGC80T75E12RD2CKA Datasheet
Additional preview pages of the IGC80T75E12RD2CKA datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon

IGC89T170S8RM - IGBT
IGC019S06S1 - 60V Transistor
IGC025S08S1 - Transistor
IGC033S101 - 100V Transistor
IGC033S10S1 - 100V Transistor
IGC037S12S1 - 120V Transistor
IGC03R60DE - IGBT
IGC04R60DE - IGBT

Full PDF Text Transcription

Click to expand full text

IGC80T75E12RD2CKA EDT2 IGBT for Automotive Applications IGBT Quality Requirement Category: Automotive Features • 750V trench + field stop technology • Low VCE(sat) • Low switching losses • Short tail current • Positive temperature coefficient • Integrated gate resistor • Easy paralleling • Integrated current mirror (current sensor) • Integrated temperature sensor • Solderable / sinterable front side pads C G TSA TSC CS E Applications • Drives Description • Recommended for power modules Product Validation • Technology qualified for automotive applications. Ready for validation for automotive applications according to AEC Q100/101 or AQG324. Key Performance Parameters Chip Type IGC80T75E12RD2CKA VCE 750V ICn 150A Die Size 80.1mm2 Package Sawn on foil Datasheet www.infineon.

Published: Apr 16, 2025 |