Datasheet Summary
IGBT4 Low Power Chip
Features
:
- 1200V Trench + Field Stop technology
- low switching losses
- positive temperature coefficient
- easy paralleling
This chip is used for:
- low / medium power modules
Applications:
- low / medium power drives
Chip Type
VCE ICn
Die Size
IGC99T120T6RL 1200V 100A 10.39 x 9.5 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Remended storage environment
10.39 x 9.5
7.987 x 8.923 1.31 x 0.811 mm 2
98.7 /...