• Part: IGI60L2727B1M
  • Description: 600V GaN half-bridge
  • Manufacturer: Infineon
  • Size: 902.87 KB
Download IGI60L2727B1M Datasheet PDF
Infineon
IGI60L2727B1M
Features - Two 270 m Ga N switches in half-bridge configuration with integrated high- and low-side gate drivers - Source / sink driving current +0.29 A / -0.7 A - Application-configurable turn-on and turn-off speed - Integrated ultra-fast low-resistance bootstrap diode - Fast input-to-output propagation (typ. 98 ns) with extremely small channel-tochannel mismatch - PWM input signal - Standard logic input levels patible with digital controllers - Single gate driver supply voltage (typ. 12 V) with fast UVLO recovery - Low-side open source for current sensing with external shunt resistor - Thermally enhanced 6 x 8 mm TFLGA-27 package - Product is fully qualified acc. JEDEC for Industrial Applications Description IGI60L2727B1M bines a half-bridge power stage consisting of two 270 m (typ. Rdson) / 600 V enhancementmode Cool Ga NTM switches with integrated gate drivers in a small 6 x 8 mm TFLGA-27 package. In the low-tomedium power area (example configuration in Figure 1), it is thus ideally...