IGI65D1414A3MS - Dual 650V Transistor

Description

IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 m (typ.

Rdson) / 650 V enhancementmode CoolGaNTM HEMTs in a small 6 x 8 mm QFN-32 package.

Features

Two 140 m GaN switches in half-bridge configuration.
Ultra fast switching.
No reverse-recovery charge.
Capable of reverse conduction.
Low gate charge, low output charge.
Kelvin source connection.
Thermally enhanced 6 x 8 mm QFN-32 package.
Qualified according to JEDEC Standard.

Infineon

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Datasheet Details

Part number	IGI65D1414A3MS
Manufacturer	Infineon
File Size	1.92 MB
Description	Dual 650V Transistor
Datasheet	IGI65D1414A3MS Datasheet
Additional preview pages of the IGI65D1414A3MS datasheet.

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Full PDF Text Transcription

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Public IGI65D1414A3MS Final datasheet CoolGaNTM Transistor Dual 650V G5 140 m / 650 V GaN half-bridge Features • Two 140 m GaN switches in half-bridge configuration • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Kelvin source connection • Thermally enhanced 6 x 8 mm QFN-32 package • Qualified according to JEDEC Standard Description IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 m (typ. Rdson) / 650 V enhancementmode CoolGaNTM HEMTs in a small 6 x 8 mm QFN-32 package. In the low-to-medium power area (example application in Figure 1), it is thus ideally suited to support the design of high-density AC/DC chargers and adapters, utilizing the superior switching behavior of CoolGaNTM HEMTs.

Published: May 24, 2025 |