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IGI65D1414A3MS Datasheet Dual 650V Transistor

Manufacturer: Infineon

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General Description

IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 m (typ.

Rdson) / 650 V enhancementmode CoolGaNTM HEMTs in a small 6 x 8 mm QFN-32 package.

In the low-to-medium power area (example application in Figure 1), it is thus ideally suited to support the design of high-density AC/DC chargers and adapters, utilizing the superior switching behavior of CoolGaNTM HEMTs.

Overview

Public IGI65D1414A3MS Final datasheet CoolGaNTM Transistor Dual 650V G5 140 m / 650 V GaN.

Key Features

  • Two 140 m GaN switches in half-bridge configuration.
  • Ultra fast switching.
  • No reverse-recovery charge.
  • Capable of reverse conduction.
  • Low gate charge, low output charge.
  • Kelvin source connection.
  • Thermally enhanced 6 x 8 mm QFN-32 package.
  • Qualified according to JEDEC Standard.

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