IGI65D1414A3MS
Features
- Two 140 m Ga N switches in half-bridge configuration
- Ultra fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Kelvin source connection
- Thermally enhanced 6 x 8 mm QFN-32 package
- Qualified according to JEDEC Standard
Description
IGI65D1414A3MS bines a half-bridge power stage consisting of two 140 m (typ. Rdson) / 650 V enhancementmode Cool Ga NTM HEMTs in a small 6 x 8 mm QFN-32 package. In the low-to-medium power area (example application in Figure 1), it is thus ideally suited to support the design of high-density AC/DC chargers and adapters, utilizing the superior switching behavior of Cool Ga NTM HEMTs. Infineon’s Cool Ga NTM and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few m A in the “on” state, a minimum on-resistance Rdson is always guaranteed.
Vin
Controller
HSGD
Rss
Rtr CC
HSGND
Vout
LSGD
Rss
Rtr...
