IGI65D1414A3MS Description
IGI65D1414A3MS bines a half-bridge power stage consisting of two 140 m (typ. Rdson) / 650 V enhancementmode CoolGaNTM HEMTs in a small 6 x 8 mm QFN-32 package. In the low-to-medium power area (example application in Figure 1), it is thus ideally suited to support the design of high-density AC/DC chargers and adapters, utilizing the superior switching behavior of CoolGaNTM HEMTs.
IGI65D1414A3MS Key Features
- Two 140 m GaN switches in half-bridge configuration
- Ultra fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Kelvin source connection
- Thermally enhanced 6 x 8 mm QFN-32 package
- Qualified according to JEDEC Standard