IGLR60R260D1
Features
- Enhancement mode transistor
- Normally OFF switch
- Ultra fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior mutation ruggedness
- Qualified for industrial applications according to JEDEC
Standards (JESD47 and JESD22)
Benefits
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
Gate
Drain
Kelvin Source
Source
1,2
Applications
Industrial and consumer SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC, Hybrid Flyback and ACF). For other applications: review Cool Ga N™ reliability white paper and contact Infineon regional support
Table 1
Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr
Key Performance Parameters at Tj = 25 °C
Value
Unit
260 mΩ
1.5 n C
11.5 n C
0 n C
Table 2
Ordering...
