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IGLR60R340D1 - Power Transistor

Key Features

  • Enhancement mode transistor.
  • Normally OFF switch.
  • Ultra fast switching.
  • No reverse-recovery charge.
  • Capable of reverse conduction.
  • Low gate charge, low output charge.
  • Superior commutation ruggedness.
  • Qualified for industrial.

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IGLR60R340D1 IGLR60R340D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI Gate 4 Drain 5 Kelvin Source 3 Source 1,2 Applications Industrial and consumer SMPS based on the half-bridge topology For other applications: review CoolGaN™ reliability white paper and contact Infineon regional support Table 1 Parameter VDS,max RDS(on),max QG,t