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IGLR70R140D2S - 700V Transistor

General Description

1 Maximum ratings 3 T

Key Features

  • narrow production tolerances and the highest product quality. Features.
  • Enhancement mode transistor.
  • Ultra‑fast switching.
  • No reverse‑recovery charge.
  • Capable of reverse conduction.
  • Low gate and output charge.
  • Superior commutation ruggedness.
  • 2 kV HBM ESD standards Benefits.
  • Normally OFF transistor technology ensures safe operation.
  • Enables rapid and precise power delivery control.
  • Improves system efficienc.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IGLR70R140D2S Final datasheet CoolGaN™ G5 CoolGaN™ Transistor 700 V G5 Infineon’s CoolGaN™ is a highly efficient gallium nitride (GaN) transistor designed for power conversion at 700 V. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using 200 mm (8 inch) wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality.