Infineon Technologies IGLR70R200D2S
700V Transistor
FEATURES
● Enhancement mode transistor● Ultra‑fast switching
● No reverse‑recovery charge
● Capable of reverse conduction
● Low gate and output charge
● Superior commutation ruggedness
● 2 kV HBM ESD standards Benefits
● Normally OFF transistor technology ensures safe operation
● Enables rapid and precise power delivery control
● Improves system efficiency and reliability
● Ensures robust performance under challenging conditions These features collectively make CoolGaN™ a game‑changer in the realm of power conversion, offering a compelling combination of efficiency, compactness, and reliability. Potential applications Consumer applications like charger, adapter, TV power, home appliance Product validation Qualified according to JEDEC Standard Table 1 Key performance parameters Parameter Value Unit VDS,max 700 V VDS,trans‑max 900 V RDS(on),max 240 mΩ Qg,typ 1.3 nC ID,pulse 16 A Qoss @ 400 V 9.6 nC Qrr 0 nC PG‑TSON‑8 5 6 7 8 4 3 2 1 Drain Pin 5-8 Gate Pin 4 Kelvin Source Pin 3 *1: In...