IGLR70R200D2S Overview
3 Thermal characteristics.
IGLR70R200D2S Key Features
- Enhancement mode transistor
- Ultra‑fast switching
- No reverse‑recovery charge
- Capable of reverse conduction
- Low gate and output charge
- Superior mutation ruggedness
- 2 kV HBM ESD standards
- Normally OFF transistor technology ensures safe operation
- Enables rapid and precise power delivery control
- Improves system efficiency and reliability