IGLT65R035D2
Overview
- Enhancement mode transistor
- Ultra‑fast switching
- No reverse‑recovery charge
- Capable of reverse conduction
- Low gate and output charge
- Superior commutation ruggedness
- 2 kV HBM ESD standards Benefits
- Normally OFF transistor technology ensures safe operation
- Enables rapid and precise power delivery control
- Improves system efficiency and reliability
