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IGLT65R110D2 - Power Transistor

General Description

1 Maximum ratings 3 T

Key Features

  • Enhancement mode transistor ‑ Normally OFF switch.
  • Ultra fast switching.
  • No reverse‑recovery charge.
  • Capable of reverse conduction.
  • Low gate charge, low output charge.
  • Superior commutation ruggedness.
  • ESD (HBM/CDM) JEDEC standards Benefits.
  • Improves system efficiency.
  • Improves power density.
  • Enables highest operating frequency.
  • System cost reduction savings.
  • Reduces EMI Potential applicat.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IGLT65R110D2 Target datasheet CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 650 V. With extensive experience on the semiconductor market, Infineon’s GaN technology brought the e‑mode concept to maturity with end‑to‑end production in high volumes. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market.