IGOT60R042D1
Features
- Enhancement mode transistor
- Normally OFF switch
- Ultra fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior mutation ruggedness
- Qualified for industrial applications according to JEDEC
Standards (JESD47 and JESD22)
Benefits
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
Applications
Industrial, tele, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review Cool Ga N™ reliability white paper and contact Infineon regional support
Table 1
Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr
Key Performance Parameters at Tj = 25 °C
Value
Unit
42 mΩ
8.8 n C
62 n C
0 n C
1 1
20 11
20 11
10 10
Gate Drain Kelvin Source Source not connected
9, 10 13,14,15,16,17,1...
