IGOT65R025D2
Description
2 Revision 0.1 2024‑04‑15 Public 650 V CoolGaN™ enhancement‑mode Power Transistor IGOT65R025D2 1 at Tj = 25 °C, unless otherwise specified.
Key Features
- Enhancement mode transistor ‑ Normally OFF switch
- Ultra fast switching
- No reverse‑recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior mutation ruggedness
- ESD (HBM/CDM) JEDEC standards
- Improves system efficiency
- Improves power density
- Enables highest operating frequency
