IGT60R190D1S Datasheet | Infineon

600V CoolGaN™ enhancement-mode Power Transistor Features - Enhancement mode transistor - Normally OFF switch - Ultra fast switching - No reverse-recovery charge - Capable of reverse conduction - Low gate charge, low output charge - Superior mutation ruggedness - Qualified for standard grade applications according to JEDEC standards Benefits - Improves system efficiency - Improves power density - Enables higher operating frequency - System cost reduction savings - Reduces EMI 1 1 SK SK 1 1 Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications Consumer SMPS and high density chargers based on the half-bridge topology...