Infineon Technologies IGW08T120
IGBT
| Part No. | IGW08T120 |
|---|---|
| Datasheet | IGW08T120 Download |
| Manufacturer |  Infineon Technologies |
| Description | IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Value 1200 Unit V A 24 24 Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C ±20 10 70 -40...+150 -55...+150 260 V µs W °C tSC Ptot Tj Tstg - 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Preliminary / Rev. 1 Sep-03 Power Semiconductors Preliminary TrenchStoP Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation v...
