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IGW30N65L5 - IGBT

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Infineon

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IGW30N65L5 IGBT by Infineon - Datasheet Preview — Datasheet preview – IGW30N65L5

Datasheet Details

Part number	IGW30N65L5
Manufacturer	Infineon
File Size	1.58 MB
Description	IGBT
Datasheet	IGW30N65L5 Datasheet
Additional preview pages of the IGW30N65L5 datasheet.

Product details

Description

. . .

Features

Low VCE(sat) L5 technology offering.
Very low collector-emitter saturation voltage VCEsat.
Best-in-Class tradeoff between conduction and switching losses.
650V breakdown voltage.
Low gate charge QG.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

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Published: Feb 17, 2016 |