Datasheet Details
| Part number | IGW30N65L5 |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.58 MB |
| Description | IGBT |
| Datasheet |
 IGW30N65L5 Datasheet
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General Description
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Key Features
- Low VCE(sat) L5 technology offering.
- Very low collector-emitter saturation voltage VCEsat.
- Best-in-Class tradeoff between conduction and switching losses.
- 650V breakdown voltage.
- Low gate charge QG.
- Maximum junction temperature 175°C.
- Qualified according to JEDEC for target.