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IHW20N65R5 - IGBT

General Description

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Key Features

  • Powerful monolithic reverse-conducting diode with low forward voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N65R5 Datasheet IndustrialPowerControl ResonantSwitchingSeries IHW20N65R5 ReverseconductingIGBTwithmonolithicbodydiode  Features: •Powerfulmonolithicreverse-conductingdiodewithlowforward voltage •TRENCHSTOPTMtechnologyoffers: -verytightparameterdistribution -highruggednessandstabletemperaturebehavior -verylowVCEsatandlowEoff -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.