IHW25N140R5L Description
Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-05-19 IHW25N140R5L Reverse-Conducting IGBT Table of contents Table of contents Description.
IHW25N140R5L Key Features
- VCE = 1400 V
- IC = 25 A
- Powerful monolithic body diode with low forward voltage designed for soft mutation only
- Very tight parameter distribution
- High ruggedness, temperature stable behavior
- Very low VCEsat
- Easy paralleling capability due to positive temperature coefficient in VCEsat
- Low EMI
- Qualified according to JESD-022 for target