Datasheet Details
| Part number | IHW30N110R3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 2.00 MB |
| Description | IGBT |
| Datasheet |
 IHW30N110R3 Datasheet
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General Description
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Key Features
- Powerful monolithic body diode with low forward voltage designed for soft commutation only.
- Very tight parameter distribution.
- High ruggedness, temperature stable behavior.
- Low VCEsat.
- Easy parallel switching capability due to positive temperature coefficient in VCEsat.
- Low EMI.
- Qualified according to JEDEC for target.