IHW30N110R3 - IGBT

Description

Features

Powerful monolithic body diode with low forward voltage designed for soft commutation only.
Very tight parameter distribution.
High ruggedness, temperature stable behavior.
Low VCEsat.
Easy parallel switching capability due to positive temperature coefficient in VCEsat.
Low EMI.
Qualified according to JEDEC for target.

Infineon

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Datasheet Details

Part number	IHW30N110R3
Manufacturer	Infineon
File Size	2.00 MB
Description	IGBT
Datasheet	IHW30N110R3 Datasheet
Additional preview pages of the IHW30N110R3 datasheet.

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Full PDF Text Transcription

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ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N110R3 Datasheet IndustrialPowerControl ResonantSwitchingSeries IHW30N110R3 ReverseconductingIGBTwithmonolithicbodydiode Features: •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •LowVCEsat •Easyparallelswitchingcapabilityduetopositivetemperature coefficientinVCEsat •LowEMI •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Apr 22, 2014 |