IHW40N135R3 - IGBT

Description

Features

Offers new higher breakdown voltage to 1350V for improved reliability.
Powerful monolithic body diode with low forward voltage designed for soft commutation only.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IHW40N135R3
Manufacturer	Infineon
File Size	1.93 MB
Description	IGBT
Datasheet	IHW40N135R3 Datasheet
Additional preview pages of the IHW40N135R3 datasheet.

📁 Similar Datasheet

IHW40N60RF - IGBT (Infineon Technologies)
IHW40N60T - IGBT (Infineon Technologies)
IHW40T120 - IGBT (Infineon Technologies)
IHW15N120R - Reverse Conducting IGBT (Infineon Technologies)
IHW15N120R3 - IGBT (Infineon Technologies)
IHW15T120 - IGBT in Trench and Fieldstop technology (Infineon Technologies)
IHW20N120R - Reverse Conducting IGBT (Infineon Technologies)
IHW20N120R2 - Reverse Conducting IGBT (Infineon Technologies)
IHW20N120R3 - IGBT (Infineon Technologies)
IHW30N100R - Reverse Conducting IGBT (Infineon Technologies)

Other Datasheets by Infineon

IHW40N135R5 - IGBT
IHW40N120R3 - IGBT
IHW40N120R5 - IGBT
IHW40N60R - IGBT
IHW40N65R5 - IGBT
IHW40N65R6 - Reverse-Conducting IGBT
IHW40T60 - IGBT
IHW15N120E1 - IGBT

Full PDF Text Transcription

Click to expand full text

ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW40N135R3 Datasheet IndustrialPowerControl IHW40N135R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogenfree(accordingtoIEC61249-2-21) •CompleteproductspectrumandPSp

Published: Dec 14, 2016 |