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IJW120R070T1 Datasheet Silicon Carbide-junction Field Effect Transistor

Manufacturer: Infineon

Overview: SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Datasheet Rev. 2.

Datasheet Details

Part number IJW120R070T1
Manufacturer Infineon
File Size 1.14 MB
Description Silicon Carbide-Junction Field Effect Transistor
Datasheet IJW120R070T1-Infineon.pdf

General Description

CoolSiC™ is Infineon’s new family of active power switches based on silicon carbide.

bining the excellent material properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher performance paired with very high ruggedness.

The extremely low switching and conduction losses make applications even more efficient, pact, lighter and cooler.

Key Features

  • Ultra fast switching.
  • Internal fast body diode.
  • Low intrinsic capacitance.
  • Low gate charge.
  • 175 °C maximum operating temperature Gate Drain Source Drain Pin 2 Gate Pin 1 Benefits.
  • Enabling higher system efficiency and/ or higher output power in same housing.
  • Enabling higher frequency / increased power density solutions.
  • Syste.

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