IJW120R100T1 - Silicon Carbide-Junction Field Effect Transistor

Description

CoolSiC™ is Infineon’s new family of active power switches based on silicon carbide.

Combining the excellent material properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher performance paired with very high ruggedness.

Features

Ultra fast switching.
Internal fast body diode.
Low intrinsic capacitance.
Low gate charge.
175 °C maximum operating temperature Gate Drain Source Drain Pin 2 Gate Pin 1 Benefits.
Enabling higher system efficiency and/ or higher output power in same housing.
Enabling higher frequency / increased power density solutions.
Syste.

Infineon

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Datasheet Details

Part number	IJW120R100T1
Manufacturer	Infineon
File Size	1.14 MB
Description	Silicon Carbide-Junction Field Effect Transistor
Datasheet	IJW120R100T1 Datasheet
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IJW120R070T1 - Silicon Carbide-Junction Field Effect Transistor

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SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Datasheet Rev. 2.0, <2013-09-11> Power Management & Multimarket 1200 V Silicon Carbide JFET Description CoolSiC™ is Infineon’s new family of active power switches based on silicon carbide. Combining the excellent material properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher performance paired with very high ruggedness. The extremely low switching and conduction losses make applications even more efficient, compact, lighter and cooler.

Published: Nov 15, 2016 |