IKA15N65ET6 - IGBT

Description

Features

C.
Very low VCE(sat) 1.5V (typ. ).
Maximum junction temperature 175°C.
Short circuit withstand time 3µs Trench and field-stop technology for 650V.

Infineon

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Datasheet Details

Part number	IKA15N65ET6
Manufacturer	Infineon
File Size	3.22 MB
Description	IGBT
Datasheet	IKA15N65ET6 Datasheet
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IKA15N65ET6 TRENCHSTOP™IGBT6 IGBTintrenchandfield-stoptechnologywithsoft,fastrecoveryanti-parallel Rapiddiode FeaturesandBenefits: C •VerylowVCE(sat)1.5V(typ.) •Maximumjunctiontemperature175°C •Shortcircuitwithstandtime3µs Trenchandfield-stoptechnologyfor650Vapplicationsoffers: •verytightparameterdistribution •highruggedness,temperaturestablebehavior •lowVCEsatandpositivetemperaturecoefficient •LowgatechargeQG •Pb-freeleadplating;RoHScompliant •Verysoft,fastrecoveryanti-parallelRapiddiode •CompleteproductspectrumandPSpiceModels: www.infineon.

Published: Apr 11, 2020 |