IKB15N65EH5 - IGBT

Description

Features

C High speed H5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
650V breakdown voltage.
Low QG.
IGBT copacked with full rated current RAPID 1 fast antiparallel diode.
Maximum junction temperature 175°C.
Pb-free lead plating; RoHS compliant.
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ G E C Potential.

Infineon

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Datasheet Details

Part number	IKB15N65EH5
Manufacturer	Infineon
File Size	1.52 MB
Description	IGBT
Datasheet	IKB15N65EH5 Datasheet
Additional preview pages of the IKB15N65EH5 datasheet.

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IKB15N65EH5 Highspeedswitchingseries5thgeneration TRENCHSTOPTM5highspeedswitchingIGBTcopackedwithfullrated currentRAPID1antiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQG •IGBTcopackedwithfullratedcurrentRAPID1fastantiparallel diode •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Jun 10, 2020 |