IKB40N65ES5 - IGBT

Description

Features

C High speed S5 technology offering.
High speed smooth switching device for hard & soft switching.
Very Low VCEsat, 1.35V at nominal current.
650V breakdown voltage.
Low QG.
IGBT copacked with full rated current RAPID 1 fast antiparallel diode.
Maximum junction temperature 175°C.
Pb-free lead plating; RoHS compliant.
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ G E C Potential.

Infineon

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Datasheet Details

Part number	IKB40N65ES5
Manufacturer	Infineon
File Size	1.51 MB
Description	IGBT
Datasheet	IKB40N65ES5 Datasheet
Additional preview pages of the IKB40N65ES5 datasheet.

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Full PDF Text Transcription

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IKB40N65ES5 Highspeedswitchingseries5thgeneration TRENCHSTOPTM5highspeedsoftswitchingIGBTcopackedwithfullrated currentRAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedS5technologyoffering •Highspeedsmoothswitchingdeviceforhard&softswitching •VeryLowVCEsat,1.35Vatnominalcurrent •650Vbreakdownvoltage •LowQG •IGBTcopackedwithfullratedcurrentRAPID1fastantiparallel diode •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Jun 10, 2020 |