IKFW50N65ES5 - high speed soft switching IGBT

Datasheet Summary

Description

Features

C High speed S5 technology offering.
High speed smooth switching device for hard & soft switching.
Very Low VCEsat, 1.35V at nominal current.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with full rated RAPID 1 fast antiparallel diode.
Maximum junction temperature 175°C.
Pb-free lead plating; RoHS compliant.
Complete product spectrum and PSpice.

Infineon

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Datasheet Details

Part number	IKFW50N65ES5
Manufacturer	Infineon
File Size	1.43 MB
Description	high speed soft switching IGBT
Datasheet	IKFW50N65ES5 Datasheet
Additional preview pages of the IKFW50N65ES5 datasheet.

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Full PDF Text Transcription

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IKFW50N65ES5 TRENCHSTOPTM5AdvancedIsolation TRENCHSTOPTM5highspeedsoftswitchingIGBTcopackedwithfullcurrent ratedRAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedS5technologyoffering •Highspeedsmoothswitchingdeviceforhard&softswitching •VeryLowVCEsat,1.35Vatnominalcurrent •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfullratedRAPID1fastantiparalleldiode •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: May 23, 2025 |