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IKW30N65WR5 - IGBT

General Description

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Key Features

  • Powerful monolithic diode optimized for ZCS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ReverseConductingSeries ReverseconductingIGBTwithmonolithicbodydiode IKW30N65WR5 Datasheet InductrialPowerControl ReverseConductingSeries ReverseconductingIGBTwithmonolithicbodydiode  Features: •PowerfulmonolithicdiodeoptimizedforZCSapplications •TRENCHSTOPTM5technologyapplicationsoffers: -highruggedness,temperaturestablebehavior -verylowVCEsatandlowEoff -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •Lowelectricalparametersdepending(dependence)on temperature •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.