Part IKW40N120CH7
Description High speed 1200V IGBT
Manufacturer Infineon
Size 1.37 MB
Infineon
IKW40N120CH7

Overview

  • VCE = 1200 V
  • IC = 40 A
  • Maximum junction temperature Tvjmax = 175°C
  • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode
  • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C
  • Optimized for high efficiency in high speed hard switching topologies (2-L inverter, 3-L NPC T-type, ...)
  • Easy paralleling capability due to positive temperature coefficient in VCEsat
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models: Potential applications
  • Industrial UPS