Part IKWH60N65WR6
Description IGBT
Manufacturer Infineon
Size 1.60 MB
Infineon
IKWH60N65WR6

Overview

  • VCE = 650 V
  • IC = 60 A
  • Pin-to-pin creepage distance > 4.8 mm
  • Pin-to-pin clearance distance > 3.4 mm
  • Monolithic diode optimized for PFC and welding applications
  • Stable temperature behavior
  • Very low VCEsat and low Eoff
  • Easy paralleling capability due to positive temperature coefficient in VCEsat
  • Low temperature dependence of VCEsat and Esw
  • Product spectrum and PSpice Models: Potential applications