IKWH75N65EH7
Features
- VCE = 650 V
- IC = 75 A
- Low switching losses
- Very low collector-emitter saturation voltage VCEsat
- Very soft, fast recovery antiparallel diode
- Smooth switching behavior
- Humidity robustness
- Optimized for hard switching, two- and three-level topologies
- plete product spectrum and PSpice Models: http://.infineon./igbt/
TO-247 HCC
- 3Pin
Potential applications
- Industrial UPS
- EV-Charging
- String inverter
- Welding
2021-10-27 restricted
Copyright © Infineon T
Product validation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
Type IKWH75N65EH7
Package PG-TO247-3-STD-NN4.8
Marking K75EEH7
Datasheet .infineon.
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.20 2023-11-15
High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology
Table of contents
Table of contents
Description
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