ILD211T - Dual Phototransistor

This page provides the datasheet information for the ILD211T, a member of the ILD205T Dual Phototransistor family.

Product Overview

Infineon

Datasheet Details

Part number	ILD211T
Manufacturer	Infineon
File Size	392.46 KB
Description	Dual Phototransistor
Datasheet	ILD211T Datasheet
Additional preview pages of the ILD211T datasheet.

ILD211T Product details

Description

The ILD205T/206T/207T/211T/213T/217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor.

Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output.

Features

Two Channel Coupler.
SOIC-8A Surface Mountable Package.
Standard Lead Spacing of .05".
Available only on Tape and Reel Option (Conforms to EIA Standard 481-2).
Isolation Test Voltage, 3000 VRMS.
High Current Transfer Ratios ILD205T, 40.
80% ILD206T, 63.
125% ILD207T, 100.
200% ILD211T, 20% Minimum ILD213T, 100% Minimum ILD217T, 100% Minimum at 1.0 mA.
High BVCEO, 70 V.
Compatible with Dual Wave, Va.

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Published: Oct 11, 2018 |