IMBG120R350M1H
Features
- Very low switching losses
- Short circuit withstand time 3 µs
- Fully controllable d V/dt
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- .XT interconnection technology for best-in-class thermal performance
- Package creepage and clearance distance > 6.1mm
- Sense pin for optimized switching performance
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system plexity and cost
Potential applications
- Drives
- Infrastructure
- Charger
- Energy generation
- Solar string inverter and solar optimizer
- Industrial power supplies
- Industrial UPS
Gate pin 1
Sense pin 2
Drain TAB
Source pin 3...7
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note: the source and sense pins are not exchangeable, their exchange might lead...
