IMBG65R022M1H Overview
3 Thermal characteristics.
IMBG65R022M1H Key Features
- Optimized switching behavior at higher currents
- mutation robust fast body diode with low Qfr
- Superior gate oxide reliability
- Tj,max=175°C and excellent thermal behavior
- Lower RDS(on) and pulse current dependency on temperature
- Increased avalanche capability
- patible with standard drivers
- Kelvin source provides up to 4 times lower switching losses
- Unique bination of high performance, high reliability and ease of use
- Ease of use and integration