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IMBG65R050M2H - MOSFET

Datasheet Summary

Description

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Features

  • Ultra-low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V.
  • Robust against parasitic turn-on even with 0 V turn-off gate voltage.
  • Flexible driving voltage and compatible with bipolar driving scheme.
  • Robust body diode operation under hard commutation events.
  • . XT interconnection technology for best-in-class thermal performance Benefits.
  • Enables high efficiency and high power density designs.
  • Facilitates gre.

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Datasheet Details

Part number IMBG65R050M2H
Manufacturer Infineon
File Size 1.61 MB
Description MOSFET
Datasheet download datasheet IMBG65R050M2H Datasheet
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Full PDF Text Transcription

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IMBG65R050M2H MOSFET CoolSiCªMOSFET650VG2 BuiltonInfineon’srobust2ndgenerationSiliconCarbidetrenchtechnology, the650VCoolSiC™MOSFETdeliversunparalleledperformance, superiorreliability,andgreateaseofuse.Itenablescosteffective,highly efficient,andsimplifieddesignstofulfilltheever-growingsystemand marketneeds. Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •.
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