IMBG65R163M1H Datasheet MOSFET

Manufacturer: Infineon

Overview: IMBG65R163M1H MOSFET 650VCoolSiCªM1SiCTrenchPowerDevice The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfineoninmorethan20years.Leveragingthewidebandgap SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique combinationofperformance,reliabilityandeaseofuse.Suitableforhigh temperatureandharshoperations,itenablesthesimplifiedandcost effectivedeploymentofthehighestsystemefficiency.

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IMBG65R163M1H mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IMBG65R163M1H
Manufacturer	Infineon
File Size	1.50 MB
Description	MOSFET
Download	IMBG65R163M1H Download (PDF)

Key Features

Optimized switching behavior at higher currents.
Commutation robust fast body diode with low Qf.
Superior gate oxide reliability.
Tj,max=175°C and excellent thermal behavior.
Lower RDS(on) and pulse current dependency on temperature.
Increased avalanche capability.
Compatible with standard drivers (recommended driving voltage: 0V-18V).
Kelvin source provides up to 4 times lower switching losses Benefits.
Unique com.

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