IMBG65R163M1H Datasheet Text
IMBG65R163M1H
MOSFET
650VCoolSiCªM1SiCTrenchPowerDevice
The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfineoninmorethan20years.Leveragingthewidebandgap SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique binationofperformance,reliabilityandeaseofuse.Suitableforhigh temperatureandharshoperations,itenablesthesimplifiedandcost effectivedeploymentofthehighestsystemefficiency.
Features
- Optimizedswitchingbehaviorathighercurrents
- mutationrobustfastbodydiodewithlowQf
- Superiorgateoxidereliability
- Tj,max=175°Candexcellentthermalbehavior
- LowerRDS(on)andpulsecurrentdependencyontemperature
- Increasedavalanchecapability
- patiblewithstandarddrivers(remendeddrivingvoltage:0V-18V)
- Kelvinsourceprovidesupto4timeslowerswitchinglosses
Benefits
- Uniquebinationofhighperformance,highreliabilityandeaseofuse
- Easeofuseandintegration
- Suitablefortopologieswithcontinuoushardmutation
- Higherrobustnessandsystemreliability
- Efficiencyimprovement
- Reducedsystemsizeleadingtohigherpowerdensity
Potentialapplications
- TeleandServerSMPS
- UPS(uninterruptablepowersupplies)
- SolarPVinverters
- EVcharginginfrastructure
- Energystorageandbatteryformation
- ClassDamplifiers
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:Thesourceandsensesourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction....