• Part: IMCQ120R017M2H
  • Description: 1200V SiC MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.23 MB
Download IMCQ120R017M2H Datasheet PDF
Infineon
IMCQ120R017M2H
Features - VDSS = 1200 V at Tvj = 25°C - IDDC = 84 A at TC = 100°C - RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C - Very low switching losses - Overload operation up to Tvj = 200°C - Short circuit withstand time 2 µs - Benchmark gate threshold voltage, VGS(th) = 4.2 V - Robust against parasitic turn on, 0 V turn-off gate voltage can be applied - Robust body diode for hard mutation - .XT interconnection technology for best-in-class thermal performance - Suitable Infineon gate drivers can be found under https://.infineon./gdfinder Potential applications - Solid-state circuit breaker / Solid-state relay - EV Charging - Online UPS / Industrial UPS - String inverter - General purpose drives (GPD) - CAV - Servo drives Product validation - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description Pin definition: - Pin 1 - Gate - Pin 2 - Kelvin sense contact - Pin 3-11 - Source - Pin 12-22, Tab - Drain Note: the source and sense pins are not...